Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
نویسندگان
چکیده
The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through AFM and X-Ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3w method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5W/mK). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3w method in the 20°C to 200°C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.
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